Semiconductor package for discharging heat and method for fabricating the same

ABSTRACT

A semiconductor package for quickly discharging heat and a method for fabricating the same are disclosed. The semiconductor package includes a semiconductor package module having a first insulation member and at least one fluid passage passing through the insulation member. Circuit patterns are formed on a first face of the first insulation member. Semiconductor chips are then disposed on the first face and are electrically connected with the circuit patterns respectively. A second insulation member is formed so as to surround the side faces of the semiconductor chips, the first insulation member, and the circuit patterns. Finally, a through electrode is formed passing through the second insulation member of the semiconductor package module and electrically connecting to the circuit patterns.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean patent applicationnumber 10-2008-0099260 filed on Oct. 9, 2008, which is incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates generally to a semiconductor package and amethod for fabricating the same, and more particularly, to asemiconductor package capable of quickly discharging heat generated fromthe semiconductor package and method for fabricating the same.

Generally, a semiconductor package is fabricated through a semiconductorchip fabrication process, an electrical inspection process, and apackaging process. In the semiconductor chip fabrication process,devices such as a transistor, a resistor and a capacitor are formed asthin film shapes on a wafer. In the electrical inspection process, thesemiconductor chip is electrically inspected to separate goodsemiconductor chips from bad semiconductor chips that are formed on thewafer. In the packaging process, the brittle semiconductor chip isprocessed in order to protect the semiconductor chip from external shockand/or vibration.

A semiconductor package including a semiconductor device is utilized inmany devices such as personal computers, television receivers, homeappliances, information and communication equipments, and the like.

In recent years, a “chip scale package” having a size no more than100-105% of a semiconductor chip has been developed in accordance withthe development of semiconductor packaging technology. Additionally, a“stacked semiconductor package” has to recently been developed in whicha plurality of semiconductor chips and/or semiconductor packages arestacked together to enhance the data storage capacity and dataprocessing speed of the package.

SUMMARY OF THE INVENTION

Embodiments of the present invention are directed to a semiconductorpackage with slimed thickness, enhanced reliability, increaseddeflection resistance, and enhanced heat radiation property.

Embodiments of the present invention are also directed to a method forfabricating the semiconductor package.

In one embodiment of the present invention, a semiconductor packageincludes a semiconductor package module including a first insulationmember having an insulation body and at least one fluid passage passingthrough an inside of the insulation member, circuit patterns formed overa first face of the first insulation member, semiconductor chipsdisposed over the first face and electrically connected with the circuitpatterns respectively and a second insulation member surrounding sidefaces of the semiconductor chips; and a through electrode passingthrough the second insulation member of the semiconductor package moduleand electrically connected with the circuit patterns.

Preferably, a plurality of the fluid passages is disposed parallel toeach other.

The semiconductor package may further include a fluid supply unit forproviding fluid to a first end of the respective fluid passage; and afluid collection unit connected to a second end of the fluid passageopposing to the first end of the fluid passage and collecting the fluid.

Preferably, at least two semiconductor package modules are stacked.

The semiconductor package may further includes a first connection pipefor connecting the fluid passages included in the odd-th semiconductorpackage modules of the stacked semiconductor package modules with eachother; and a second connection pipe for connecting the fluid passagesincluded in the even-th semiconductor package modules of the stackedsemiconductor package modules with each other.

The semiconductor package may further includes a fluid supply unit forproviding fluid to a first end of a fluid passage connected into onepiece by the first connection pipes; and a fluid collection unitconnected to a second end opposing to a first end of a fluid passageconnected into one piece by the second connection pipes.

The semiconductor package may further include a cover member forcovering the upmost semiconductor package module of the stackedsemiconductor package modules.

The cover member may further include an additional circuit to patterndisposed over an upper face of the cover member, and the additionalcircuit pattern is electrically connected with the through electrode.

The first insulation member includes connection pads disposed over theother face opposing to the first face and electrically connected withthe through electrode; and bump structures disposed over the respectiveconnection pads.

The semiconductor package may further include an insulation film forcovering the semiconductor chips and the second insulation member; andan additional circuit pattern disposed over the insulation film andelectrically connected with the through electrode.

In another embodiment of the present invention, a semiconductor packageincludes a semiconductor package module in which at least twosub-semiconductor packages are stacked, each sub-semiconductor packageincluding a first insulation member, circuit patterns formed over afirst face of the first insulation member, semiconductor chips disposedover the first face and electrically connected with the circuit patternsrespectively and a second insulation member surrounding side faces ofthe semiconductor chips; and a through electrode passing through thesecond insulation member of the semiconductor package module andelectrically connected with the circuit patterns, wherein thesemiconductor package further comprises at least one fluid passagepassing through an inside of the first insulation member of thelowermost semiconductor package of the stacked semiconductor packages.

In yet another embodiment of the present invention, a method forfabricating a semiconductor package includes forming a semiconductorpackage module including a first insulation member formed with circuitpatterns over a first face thereof and having at least one fluid passagetherein, semiconductor chips electrically connected with the circuitpatterns and a second insulation member covering side faces of thesemiconductor chips; and forming a through electrode passing through thesecond insulation member and electrically connected with the circuitpatterns.

The method may further include, before the step of forming the throughelectrode, stacking at least two semiconductor package modules.

The method may further include, after the step of forming the throughelectrode, connecting a fluid supply unit for providing fluid to a firstend of the fluid passage; and connecting a fluid collecting unit forcollecting the fluid to a second end opposing to the first end of thefluid passage.

The step of forming the semiconductor package module includes forming aninsulation film having an opening for exposing the through electrodeover the semiconductor chips and the second insulation member; andforming an additional circuit pattern electrically connected with thethrough electrode over the insulation film.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a semiconductor package inaccordance with an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a fluid supply unit and a fluidcollection unit provided in the semiconductor package according to theembodiment of the present invention shown in FIG. 1.

FIG. 3 is a cross-sectional view showing a semiconductor package inaccordance with another embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a semiconductor package inaccordance with another embodiment of the present invention.

FIG. 5 is a cross-sectional view showing that a fluid supply unit and afluid collection unit are mounted in the semiconductor package shown inFIG. 4.

FIG. 6 is a cross-sectional view showing a semiconductor package inaccordance with another embodiment of the present invention.

FIGS. 7 through 12 are cross-sectional views showing a method offabricating a semiconductor package in accordance with an embodiment ofthe present invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

FIG. 1 is a cross-sectional view showing a semiconductor package inaccordance with an embodiment of the present invention.

Referring to FIG. 1, a semiconductor package 400 includes asemiconductor package module 100 and a through electrode 300.

The semiconductor package module 100 includes a first insulation member110, circuit patterns 120, semiconductor chips 130, and a secondinsulation member 140.

The first insulation member 110 has, for example, a substantially planarshape. Structurally, the first insulation member 110 includes aninsulation body 117 having a first face 112, a second face 114 oppositethe first face 112, side faces 116 connecting the first face 112 and thesecond face 114, and fluid passages 118.

The fluid passages 118 are formed between the first face 112 and thesecond face 114 of the first insulation member 110. The fluid passage118 can be a through hole which passes through the opposing side faces116 and between the first face 112 and the second face 114. The fluidpassage 118 can be formed in a linear shape or a curved shape whenviewing the plane of the first insulation member 110 from above.

For example, a plurality of fluid passages 118 can be disposed parallelto each other within the first insulation member 110. Alternatively, asingle fluid passage 118 can be disposed in a curved shape within thefirst insulation member 110.

Fluids such as liquid and coolant, as well as gas, may pass through thefluid passage 118. Heat generated from the is semiconductor chip 130 isquickly discharged to the outside of the semiconductor package 400 bythe fluid passage 118 and the fluid passing through the fluid passage118, thereby further enhancing an operational property of thesemiconductor chip 130.

The circuit patterns 120 are disposed on the first face 112 of the firstinsulation member 110. The circuit patterns 120 are electricallyconnected to the semiconductor chips 130 and the through electrodes 300,which will be described later. The circuit patterns 120 can contain, forexample, copper or copper alloy.

In order to enhance an adhesive force between the circuit pattern 120and a bump formed to the semiconductor chip 130 described later, thecircuit pattern 120 can include a plating layer 122. Examples of thematerial for the plating layer 122 may include gold, nickel, palladiumand an alloy thereof.

Meanwhile, the first insulation member 110 in accordance with thecurrent embodiment of the present invention may further include aconnection pad 119 a and an external connection bump 119 b. Theconnection pad 119 a is disposed on the second face 114 of the firstinsulation member 110 and the external connection to bump 119 b isdisposed on the connection pad 119 a.

The semiconductor chip 130 is disposed over the first face 112 of thefirst insulation member 110 and the semiconductor chip 130 and thecircuit pattern 120 are electrically connected. The semiconductor chip130 includes a circuit unit (not shown) having a is data storage unit(not shown) for storing data and a data processing unit (not shown) forprocessing the data. The semiconductor chip 130 also includes a bondingpad 131 electrically connected to the circuit unit and a bump 132connected to the bonding pad 131. The bump 132 may contain a solder,gold, a gold alloy and the like, and the bump 132 is formed in a columnshape protruding from the bonding pad 131.

The semiconductor chip 130 and the bump 132 are bonded to the circuitpattern 120 in a flip chip manner. Alternatively, the bonding pad 131 ofthe semiconductor chip 130 may be disposed opposite to the first face112 of the first insulation member 110. The bonding pad 131 and thecircuit pattern 120 may then be electrically connected through aconductive wire (not shown) without the bump 132.

In the present embodiment, at least two semiconductor chips 130 can bedisposed on the first insulation member 110, and the semiconductor chips130 can be of the same kind or different kinds of semiconductor chips.

Meanwhile, the circuit pattern 120 may be electrically m connected tonot only the semiconductor chip 130, but also to passive devices such adiode, a transistor, an inductor, and a resistor.

The second insulation member 140 surrounds the side faces of thesemiconductor chip 130 and exposes the upper face of the semiconductorchip 130. That is, the second insulation member 140 is formed in theareas between the semiconductor chip 130 and the first face of the firstinsulation member 110. In the present embodiment, the second insulationmember 140 can be an epoxy resin or a thermosetting resin. In thepresent embodiment, the upper face of the second insulation member 140and the upper face of the semiconductor chip 130 are formed to have asubstantially planar combined face.

The through electrode 300 passes through the first insulation member 120and the second insulation member 140. The through electrode 300 iselectrically connected to the circuit pattern 120 and the connection pad119 a. The through electrode 300 has a column shape and the throughelectrode 300 can include copper or copper alloy.

A plurality of through electrodes 300 are provided and can be disposedin a zigzag shape when viewed from above the plane where the throughelectrodes 300 are disposed in order to maximize the formation of morethrough electrodes in a limited area.

FIG. 2 is a cross-sectional view showing a fluid supply unit and a fluidcollection unit provided in the semiconductor package in accordance withthe embodiment of the present invention shown in FIG. 1.

Referring to FIG. 2, a first end of the fluid passage 118 of is thefirst insulation member 110 is connected to a fluid supply unit 210 forsupplying the fluid to the fluid passage 118 and a second end of thefluid passage 118 is connected to a fluid collection unit 220 forcollecting the cooling fluid supplied from the fluid supply unit 210 inorder to provide fluid for cooling the semiconductor package 400. Thefluid collected in the fluid collection unit 220 is circulated back tothe fluid supply unit 210 through a bypass pipe (not shown).

It is possible to quickly discharge the heat generated from thesemiconductor package 400 and thus enhance the performance of thesemiconductor package 400 by providing the fluid to the fluid passage118 using the fluid collection unit 220 and the fluid supply unit 210.

FIG. 3 is a cross-sectional view showing a semiconductor package inaccordance with another embodiment of the present invention. Thesemiconductor package shown in FIG. 3 is substantially the same as thesemiconductor package shown in FIG. 1, except for an insulation film andan additional insulation pattern. Therefore, identical referencenumerals and names will be given to to corresponding identical parts anda duplicated description of the identical parts will be omitted.

Referring to FIG. 3, the semiconductor package 400 includes thesemiconductor package module 100, the through electrode 300, aninsulation film 150, and an additional circuit is pattern 160.

The insulation film 150 covers the upper faces of the second insulationmember 140 and the semiconductor chip 130. The insulation film 150 canbe an organic film or an inorganic film. The insulation film 150 hasopenings for exposing the respective through electrodes 300.

The additional circuit pattern 160 is disposed on the insulation film150. In the present embodiment, the additional circuit pattern 160 iselectrically connected to the through electrode 300 that is exposed viathe opening formed in the insulation film 150.

The additional circuit pattern 160 can be electrically connected with aconnection member such as a solder ball, an additional semiconductorchip (not shown), or passive devices.

FIG. 4 is a cross-sectional view showing a semiconductor package inaccordance with another embodiment of the present invention.

Referring to FIG. 4, the semiconductor package 400 shown in FIG. 1 canbe stacked multiple times as shown in FIG. 4 to enhance the data storagecapacity and the data processing speed.

The semiconductor package 400 in accordance with the present embodimentincludes a first semiconductor package module 410, a secondsemiconductor package module 420, a third semiconductor package module430, a fourth semiconductor is package module 440, and the throughelectrode 300.

In the present embodiment, each of the first through fourthsemiconductor package modules 410, 420, 430, 440 has substantially thesame configuration as the semiconductor package 400 shown in FIG. 1. Inthe present embodiment, identical names and reference numerals will begiven to corresponding identical parts of the first through fourthsemiconductor package modules 410, 420, 430, 440. However, in somecases, different numerals will be given to clarify the description.

The first semiconductor package module 410 includes a circuit pattern123, a first insulation member 110 having a fluid passage 118, asemiconductor chip 134 having a bump 132 connected to the circuitpattern 123, and a second insulation member 141 surrounding side facesof the semiconductor chip 134.

The second semiconductor package module 420 is disposed on the firstsemiconductor package module 410 in a stacked structure. The secondsemiconductor package module 420 includes a circuit pattern 124, a firstinsulation member 110 a having a fluid passage 118 a, a semiconductorchip 135 having a m bump connected to the circuit pattern 124, and asecond insulation member 142 surrounding side faces of the semiconductorchip 135. In the present embodiment, the semiconductor chip 134 of thefirst semiconductor package module 410 is attached to the firstinsulation member 110 a of the second semiconductor package is module420.

The third semiconductor package module 430 is disposed on the secondsemiconductor package module 420. The third semiconductor package module430 includes a circuit pattern 125, a first insulation member 110 bhaving a fluid passage 118 b, a semiconductor chip 136 having a bumpconnected to the circuit pattern 125, and a second insulation member 143surrounding side faces of the semiconductor chip 136. In the presentembodiment, the semiconductor chip 135 of the second semiconductorpackage module 420 is attached to the first insulation member 110 b ofthe third semiconductor package module 430.

The fourth semiconductor package module 440 is disposed on the thirdsemiconductor package module 430. The fourth semiconductor packagemodule 440 includes a circuit pattern 126, a first insulation member 110c having a fluid passage 118 c, a semiconductor chip 137 having a bumpconnected to the circuit pattern 126, and a second insulation member 144surrounding side faces of the semiconductor chip 137. In the presentembodiment, the semiconductor chip 136 of the third semiconductorpackage module 430 is attached to the first insulation member 110 c ofthe fourth semiconductor package module 440.

The through electrode 300 passes through the first through fourthsemiconductor packages 410, 420, 430, 440 and is electrically connectedto the circuit patterns 123, 124, 125, 126. The through electrode 300passes through the first insulation member 110 and is electricallyconnected to a connection pad 119 a disposed on a rear face of the firstinsulation substrate 110. The rear face of the first insulationsubstrate 110 in FIG. 4 is the same as the second face 114 shown in FIG.1.

Meanwhile, the semiconductor package 400 in accordance with the presentembodiment may further include a cover unit 205. The cover unit 205covers the semiconductor chip 137 and the second insulation member 144of the fourth semiconductor package module 440. An additional circuitpattern (not shown) connected to the through electrode 300 may be formedover an upper face of the cover unit 205.

FIG. 5 is a cross-sectional view showing that a fluid supply unit and afluid collection unit are mounted in the semiconductor s package shownin FIG. 4.

Referring to FIG. 5, a first connection pipe 230 connects the fluidpassages 118, 118 b and is disposed at a second end opposing a first endof the fluid passage 118 and fluid passage 118 b.

A second connection pipe 240 connects the fluid passages 118 a, 118 cand is disposed at a second end opposing a first end of the fluidpassage 118 a and fluid passage 118 c.

The first end of the fluid passage 118 and the first end of the fluidpassage 118 a are respectively connected to the fluid supply unit 210disposed at the first end of the fluid passage 118 and fluid passage 118a, which provides cooling fluid to the fluid passages 118, 118 a.

The first end of the fluid passage 118 b and the first end of the fluidpassage 118 c are respectively connected to the fluid collection unit220 disposed at the first end of the fluid passage 118 b and fluidpassage 118 c, which collects the fluid having been passed through thefluid passages 118, 118 a, 118 b, 118 c.

FIG. 6 is a cross-sectional view showing a semiconductor package inaccordance with another embodiment of the present invention. Thesemiconductor package shown in FIG. 6 is substantially the same as thesemiconductor package shown in FIG. 4, except for the fluid passages ofthe first insulation substrates. Therefore, identical reference numeralsand names will be given to corresponding identical parts and aduplicated description to of the identical parts will be omitted.

Referring to FIG. 6, the semiconductor package 400 includes the firstsemiconductor package module 410 having the first insulation member 110with the fluid passage 118, the second semiconductor package module 420having the first insulation member 110 a without the fluid passage, thethird semiconductor package module 430 having the first insulationmember 110 b without the fluid passage, the fourth semiconductor packagemodule 440 having the first insulation member 110 c without the fluidpassage, and the through electrode 300.

In the present embodiment as shown in FIG. 6, it is possible tosignificantly reduce the total volume and thickness of the semiconductorpackage 400 since only the first insulation member 110 of the firstsemiconductor package module 410 is selectively formed with the fluidpassage 118 and the second through fourth semiconductor package modules420, 430, 440 respectively include the first insulation members 110 a,110 b, 110 c without the fluid passage.

FIGS. 7 through 12 are cross-sectional views showing a method offabricating a semiconductor package in accordance with an embodiment ofthe present invention.

Referring to FIG. 7, the semiconductor package module is fabricatedfirst in order to begin fabrication of the semiconductor package.

In order to fabricate the semiconductor package module, the firstinsulation member 110 is prepared having a substantially planar shapeand formed with the fluid passage 118 therein. The fluid passage 118formed in the first insulation member 110 passes through the firstinsulation member 110 from a first side face of the first insulationmember 110 to a second side face opposite the first side face.

The fluid passage 118 can be formed, for example, by a drilling process.For example, a plurality of fluid passages 118 can be formed parallel toeach other within the first insulation member 110. The fluid passage 118may be formed in a linear shape when viewing the first insulation member110 in planar view from above.

Alternatively, the fluid passage 118 may have a curved shape whenviewing the first insulation member 110 in planar view from above. Thefluid passage 118 having the curved shape may be formed by forming thefluid passages 118 in two pieces of the first insulation members 110respectively and then joining the first insulation members 110.

A metal film 120 a is formed over the first face 112 of the firstinsulation member 110 formed with the fluid passage 118 to form thecircuit pattern.

In the present embodiment, the metal film 120 a can be, for example, acopper film. The metal film 120 a can be attached to the first face 112of the first insulation member 110 by an adhesive. Alternatively, themetal film 120 a can be formed on the first face 112 of the firstinsulation member 110 using a plating method such as an electrolessplating. In addition, a metal film 120 b can be further formed on thesecond face 114 of the first insulation member 110 opposite the firstface 112.

After the metal film 120 a is attached or formed on the first insulationmember 110, a photoresist film (not shown) is formed on the metal film120 a. The photoresist film is patterned using a photo process includingan exposure process and a development process thereby forming thephotoresist pattern (not shown) on the is metal film 120 a.

Referring to FIG. 8, after the photoresist pattern is formed on themetal film 120 a, the metal film 120 a is patterned using thephotoresist pattern as an etch mask to form the circuit pattern 120 onthe first face 112 of the first insulation member 110.

After the circuit pattern 120 is formed on the first face 112 of thefirst insulation member 110, a plating layer 122 can be formed on thesurface of the circuit pattern 120. Examples of the material for theplating layer 122 may include gold, nickel, palladium and an alloythereof.

Referring to FIG. 9, after the circuit pattern 120 and the plating layer122 are formed on the first face 112 of the first insulation member 110,the respective circuit patterns 120 are electrically connected to thicksemiconductor chips 130 a that are not subject to a back grindingprocess.

In the present embodiment, the semiconductor chips 130 a aresemiconductor chips that are not subject to the back grinding processafter being singulated from a wafer (not shown). In the presentembodiment, when the thick semiconductor chips 130 a, to which are notsubject to the back grinding process, are mounted, it is possible toprevent deflection and twist of the semiconductor chip 130 a.

In the present embodiment, bonding pads are formed on the upper face ofthe semiconductor chips 130, respectively. The bonding pads 131 areelectrically connected to bumps 132.

The bumps 132 of the semiconductor chips 130 a are then bonded to thecircuit pattern 120, for example, in a flip chip manner.

Meanwhile, when forming the circuit pattern 120 over the first face 112of the first insulation member 110, a circuit pattern (not shown) for anelectric device electrically connected with the circuit pattern 120 canbe formed together over the first insulation member 110. In anembodiment of the present invention, the circuit pattern for an electricdevice is connected with an electric device. The electric device can be,for example, a diode, a transistor, a capacitor, a resistor, an inductorand the like.

Referring to FIG. 10, after the semiconductor chips 130 a are flip chipconnected to the circuit pattern 120 formed over first face 112 of thefirst insulation member 110, a preliminary second insulation member 140a is formed over the first face 112 of the first insulation member 110.In order to form the preliminary second insulation member 140 a, aflowable insulation material containing a solvent is formed between thesemiconductor chips 130 a disposed over the first face 112 of the firstinsulation member 110. Alternatively, the preliminary second insulationmember 140 a can be formed between the semiconductor chips 130 adisposed over the first face 112 of the first insulation member 110 bydisposing an insulation plate containing a thermosetting material andthen applying heat and pressure to the insulation plate.

Referring to FIG. 11, after the thick semiconductor chips 130 a and thepreliminary second insulation member 140 a are formed over the firstface 112 of the first insulation substrate 110, the rear faces of thesemiconductor chips 130 a and the preliminary second insulation member140 a are polished, for example, by Chemical Mechanical Polishing (CMP)process. As a result, the semiconductor chip have a significantlyreduced thickness. The preliminary second insulation member 140 a isalso polished to form the polished second insulation member 140. As aresult, the semiconductor chips 130 and the second insulation member 140are formed to have a substantially coplanar surface.

Subsequently, as shown in FIG. 1, the through hole for exposing thecircuit pattern 120 is formed in the second insulation member 140 by adrilling process or a laser drilling process. The through electrode 300is then formed within the through hole. To form the through electrode, ametal seed layer is formed on an inner surface of the second insulationmember 140 and metal can be filled in the through hole by a platingprocess using the metal seed layer.

Referring to FIG. 12, after the polished semiconductor chip 130 and thepolished second insulation member 140 are formed on the first insulationmember 110, an insulation film 150 may be formed over the semiconductorchips 130 and the second insulation member 140. In the presentembodiment, the insulation film 150 can be, for example, an organic filmor an inorganic film.

A metal film (not shown) for forming the additional circuit pattern isformed on the insulation film 150.

In the present embodiment, the metal film can be, for example, a copperfilm. Alternatively, the metal film can be formed by forming a metalseed layer over the insulation film 150 and then performing a platingprocess such as an electroplating.

After the metal film is attached or formed on the insulation film 150, aphotoresist film (not shown) is formed on the metal film. Thephotoresist film is patterned by a photo process including an exposureprocess and a development process to form the photoresist pattern havingsubstantially the same shape as the circuit pattern on the metal film.

After the photoresist pattern is formed on the metal film, the metalfilm is patterned using the photoresist pattern as an etch mask to formthe additional circuit pattern 160 on the insulation film 150.

A plating layer 162 can be formed on the surface of the additionalcircuit pattern 160 after the additional circuit pattern 160 is formed.Examples of the material for the plating layer 162 may include gold,nickel, palladium and an alloy thereof.

Referring again to FIG. 4, the semiconductor package module 400fabricated using the process described in FIGS. 7 through 12 can bestacked multiple times to enhance the data storage capacity and the dataprocessing speed. In the present embodiment, when stacking a pluralityof semiconductor packages 400 shown in FIG. 1, the through electrode 300is formed after the plurality of the semiconductor packages are stacked.

Meanwhile, a cover unit can be disposed on the semiconductor chip 130 ofthe uppermost semiconductor package module 100 after the semiconductorpackage 400 is formed having the plurality of semiconductor packagemodules 100. The cover unit 205 may have additional circuit wiring thatis electrically connected with the through electrode 300.

A fluid supply unit 210 and fluid connection unit 230 and 240 is thenformed after the semiconductor package 400 having the semiconductorpackage modules 100 is fabricated. The fluid supply unit 210 can bedisposed at a first end of the fluid passage 118 to provide coolingfluid to the fluid passage 118 formed in the first insulation member 110of each semiconductor package module 100. The fluid collection unit 210for collecting the cooling fluid can be disposed at a second end of thefluid passage 118 opposite the first end. In the present embodiment,where the semiconductor package 400 includes a plurality of firstinsulation members 110, the fluid passages 118 of the first insulationmembers 110 can be connected to each other using connection pipes.

Although in the present embodiment, the first insulation members 110 ofthe plurality of semiconductor package is modules 100 are formed withrespective fluid passages 118, the fluid passage 118 may be selectivelyformed in only the first insulation member 118 of the lowermostsemiconductor package module 100 of the plurality of the semiconductorpackage modules 100, as shown in FIG. 6.

As is apparent from the above description, it is possible to quicklydischarge heat generated from the semiconductor package having aplurality of stacked semiconductor chips to thereby further enhance theperformance of the semiconductor package.

Although specific embodiments of the present invention have beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and the spirit of theinvention as disclosed in the accompanying claims.

1. A method for fabricating a semiconductor package, comprising thesteps of: forming a semiconductor package module comprising a firstinsulation member having an insulation body and at least one fluidpassage formed in the first insulation body, circuit patterns formed ona first face of the first insulation member, plating layers directlycontacting and covering the circuit patterns, bumps directly contactingthe plating layer, semiconductor chips comprising bonding pads thatdirectly contact the bumps such that the semiconductor chips areelectrically connected to the circuit patterns respectively through thebumps and the plating layers, and a second insulation member coveringthe first insulation member, the circuit patterns, and a portion of thesemiconductor chips; and forming a through electrode passing through thesecond insulation member and being electrically connected to the circuitpatterns.
 2. The method according to claim 1, further comprising, beforethe step of forming the through electrode, a step of stacking aplurality of semiconductor package modules.
 3. The method according toclaim 1, further comprising the steps of: connecting a fluid supply unitfor providing fluid to a first end of the at least one fluid passage;and connecting a fluid collecting unit for collecting the fluid to asecond end opposite the first end of the at least one fluid passage. 4.The method according to claim 1, wherein the step of forming thesemiconductor package module includes the steps of: forming aninsulation film on the semiconductor chips and the second insulationmember and the insulation film having an opening exposing the throughelectrode; and forming an additional circuit pattern on the insulationfilm and being electrically connected with the through electrode.